Applications

Semiconductor Advanced Packaging

Semiconductor research and development

Semiconductor Failure Analysis

Semiconductor power devices

Semiconductor materials characterization

Key Features

Leading edge transistor probing

nProber IV SteadFast Nanomanipulators and temperature-controlled probing environment combine to give the probe the necessary stability for working with leading-edge transistors.

High-resolution imaging of sensitive samples

The new LEEN2 Column of the nProber IV System enables low eV imaging and probing operation and includes an advanced control system that reduces sample dose by up to 30%. These advances allow the nProber IV System to provide accurate measurements of critical transistor parameters with minimal shifts from SEM imaging.

Guided operation and automation

The nProber IV System is equipped with eFast semi-automated guided workflows that take you through system operation from sample loading to electrical characterization. eFast Software automates the setup of the LEEN2 Column and controls key sub-systems ensuring consistent results in a multi-user production environment.

3D structures

The nProber IV Systems can be equipped with EBIRCH2 and EBAC to find critical faults in 3D interconnect structures down to ~100 Ω. EBIRCH2 can also be used to localize critical defects in FinFET transistors.

In addition, the nProber IV System can be equipped with a sub-stage that enables probes to be separated by many millimeters, essential for the isolation of faults in large 3D NAND structures.

Resistive gate faults

The nProber IV Systems can isolate resistive gate faults utilizing high-speed pulsed probing with rise times of less than 1 ns.

Automation

Our easyProbe Software automates key steps in the nProber IV workflow including: cleaning the probes, lowering the probes to the sample, and optimizing the electrical contact between the probes and the sample. easyProbe Software significantly reduces the training required to use the nProber IV System and allows for extended periods of unattended operation.

Automotive reliability

The optional Thermal Characterization Package supports the most recent automotive reliability standards. Samples temperatures can be controlled from -40°C to 150°C in order to isolate faults that are not detectable at ambient temperatures.

Techniques

Nanoprobing

As device complexity increases, so does the number of places defects have to hide. Nanoprobing provides the precise localization of electrical faults, which is critical for an effective transmission electron microscopy failure analysis workflow.

Sample Preparation of Semiconductor Devices

Thermo Scientific DualBeam systems provide accurate TEM sample preparation for atomic-scale analysis of semiconductor devices. Automation and advanced machine learning technologies produce high-quality samples, at the correct location, and a low cost per sample.

Device Delayering

Shrinking feature size, along with advanced design and architecture, results in increasingly challenging failure analysis for semiconductors. Damage-free delayering of devices is a critical technique for the detection of buried electrical faults and failures.

For more detail information of nProber IV System, please visit the website:https://www.thermofisher.com/vn/en/home/electron-microscopy/products/electrical-failure-analysis-systems/nprober-iv.html#features

 Or directly contact to ADGroup